на замовлення 4000 шт:
термін постачання 161-170 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 287.41 грн |
| 10+ | 238 грн |
| 25+ | 195.61 грн |
| 100+ | 167.57 грн |
| 250+ | 158.22 грн |
| 500+ | 148.88 грн |
| 1000+ | 127.51 грн |
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Технічний опис BSC030N10NS5SCATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 171A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 115µA, Supplier Device Package: PG-WSON-8-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V.
Інші пропозиції BSC030N10NS5SCATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| BSC030N10NS5SCATMA1 | Виробник : Infineon Technologies |
 SP005561083 |
товар відсутній |
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BSC030N10NS5SCATMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 115µA Supplier Device Package: PG-WSON-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V |
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BSC030N10NS5SCATMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 115µA Supplier Device Package: PG-WSON-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V |
товар відсутній |