| Кількість | Ціна |
|---|---|
| 2+ | 252.45 грн |
| 10+ | 177.51 грн |
| 25+ | 138.85 грн |
| 100+ | 118.41 грн |
| 250+ | 108.54 грн |
| 500+ | 102.20 грн |
| 1000+ | 93.04 грн |
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Технічний опис BSC0402NSATMA1 Infineon Technologies
Description: MOSFET N-CH 150V 80A TDSON-8, Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8-7, Vgs(th) (Max) @ Id: 4.6V @ 107µA, Power Dissipation (Max): 139W (Tc).
Інші пропозиції BSC0402NSATMA1 за ціною від 89.49 грн до 286.25 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSC0402NSATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 150V 80A TDSON-8Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-7 Vgs(th) (Max) @ Id: 4.6V @ 107µA Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10 Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 4848 шт: термін постачання 21-31 дні (днів) |
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| BSC0402NSATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 80A TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 150V 80A TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 4848 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 286.25 грн |
| 10+ | 180.73 грн |
| 100+ | 126.86 грн |
| 500+ | 97.47 грн |
| 1000+ | 90.53 грн |
| 2000+ | 89.49 грн |