BSC057N03LSGATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 17A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
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Технічний опис BSC057N03LSGATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 17A/71A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TDSON-8-5, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V.
Інші пропозиції BSC057N03LSGATMA1 за ціною від 22.91 грн до 66.62 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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BSC057N03LSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 17A/71A TDSON Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8-5 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 5308 шт: термін постачання 21-31 дні (днів) |
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BSC057N03LSGATMA1 | Infineon Technologies |
MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3 |
на замовлення 3999 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| BSC057N03LSGATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 17A/71A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 17A/71A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 5308 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.62 грн |
| 10+ | 55.70 грн |
| 100+ | 38.55 грн |
| 500+ | 30.23 грн |
| 1000+ | 25.73 грн |
| 2000+ | 22.91 грн |
| BSC057N03LSGATMA1 |
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Виробник: Infineon Technologies
MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3
MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3
на замовлення 3999 шт:
термін постачання 21-30 дні (днів)