BSC0704LSATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 11A/47A TDSON, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TDSON-8-6, Vgs(th) (Max) @ Id: 2.3V @ 14µA, Power Dissipation (Max): 2.1W (Ta), 36W (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 47A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).