| Кількість | Ціна |
|---|---|
| 2+ | 206.40 грн |
| 10+ | 141.04 грн |
| 100+ | 85.28 грн |
| 500+ | 71.89 грн |
| 2000+ | 71.19 грн |
| 4000+ | 61.04 грн |
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Технічний опис BSC070N10NS5SCATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 14A/82A 8SWSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V, Power Dissipation (Max): 3W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 50µA, Supplier Device Package: PG-WSON-8-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V.
Інші пропозиції BSC070N10NS5SCATMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
BSC070N10NS5SCATMA1 | Infineon Technologies |
 Trans MOSFET N-CH 100V 14A 8-Pin WSON EP T/R |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
 |
BSC070N10NS5SCATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 14A/82A 8SWSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 50µA Supplier Device Package: PG-WSON-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
|
|
BSC070N10NS5SCATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 14A/82A 8SWSON Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 50µA Supplier Device Package: PG-WSON-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. |
| BSC070N10NS5SCATMA1 |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 14A 8-Pin WSON EP T/R
Trans MOSFET N-CH 100V 14A 8-Pin WSON EP T/R
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| BSC070N10NS5SCATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 14A/82A 8SWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Description: MOSFET N-CH 100V 14A/82A 8SWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| BSC070N10NS5SCATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 14A/82A 8SWSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Description: MOSFET N-CH 100V 14A/82A 8SWSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.