| Кількість | Ціна |
|---|---|
| 3+ | 129.92 грн |
| 10+ | 78.79 грн |
| 100+ | 47.01 грн |
| 500+ | 41.58 грн |
| 1000+ | 37.57 грн |
| 2500+ | 37.43 грн |
| 5000+ | 33.55 грн |
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Технічний опис BSC076N04NDATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W (Ta), 65W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 20V, Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 30µA, Supplier Device Package: PG-TDSON-8-4, Part Status: Active.
Інші пропозиції BSC076N04NDATMA1 за ціною від 45.91 грн до 171.27 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSC076N04NDATMA1 | Infineon Technologies |
 Description: MOSFET 2N-CH 40V 20A 8TDSONPart Status: Active Supplier Device Package: PG-TDSON-8-4 Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 20V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2.3W (Ta), 65W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 4460 шт: термін постачання 21-31 дні (днів) |
|
| BSC076N04NDATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Part Status: Active
Supplier Device Package: PG-TDSON-8-4
Vgs(th) (Max) @ Id: 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.3W (Ta), 65W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 20A 8TDSON
Part Status: Active
Supplier Device Package: PG-TDSON-8-4
Vgs(th) (Max) @ Id: 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.3W (Ta), 65W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 4460 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 171.27 грн |
| 10+ | 105.83 грн |
| 100+ | 71.99 грн |
| 500+ | 53.96 грн |
| 1000+ | 49.58 грн |
| 2000+ | 45.91 грн |