BSC077N12NS3GATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 13.4/98A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V
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Технічний опис BSC077N12NS3GATMA1 Infineon Technologies
Description: MOSFET N-CH 120V 13.4/98A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc), Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 4V @ 110µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V.
Інші пропозиції BSC077N12NS3GATMA1 за ціною від 78.24 грн до 269.60 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSC077N12NS3GATMA1 | Infineon Technologies |
MOSFETs N-Ch 120V 98A TDSON-8 OptiMOS 3 |
на замовлення 6075 шт: термін постачання 21-30 дні (днів) |
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BSC077N12NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 120V 13.4/98A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V |
на замовлення 15567 шт: термін постачання 21-31 дні (днів) |
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| BSC077N12NS3GATMA1 |
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Виробник: Infineon Technologies
MOSFETs N-Ch 120V 98A TDSON-8 OptiMOS 3
MOSFETs N-Ch 120V 98A TDSON-8 OptiMOS 3
на замовлення 6075 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 239.29 грн |
| 10+ | 157.25 грн |
| 100+ | 99.38 грн |
| 500+ | 84.58 грн |
| 1000+ | 83.87 грн |
| 2500+ | 80.35 грн |
| 5000+ | 78.24 грн |
| BSC077N12NS3GATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 13.4/98A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V
Description: MOSFET N-CH 120V 13.4/98A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V
на замовлення 15567 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 269.60 грн |
| 10+ | 169.89 грн |
| 100+ | 118.63 грн |
| 500+ | 90.79 грн |
| 1000+ | 88.46 грн |