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BSC084P03NS3EGATMA1

BSC084P03NS3EGATMA1 Infineon Technologies

BSC084P03NS3E+G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304320896aa20120c84ef6ec327c
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 14.9A 8TDSON
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 57.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Last Time Buy
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 3V @ 110µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
на замовлення 8731 шт:
термін постачання 21-31 дні (днів)
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362+55.77 грн
Мінімальне замовлення: 362
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Технічний опис BSC084P03NS3EGATMA1 Infineon Technologies

Description: MOSFET P-CH 30V 14.9A 8TDSON, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Last Time Buy, Supplier Device Package: PG-TDSON-8-5, Vgs(th) (Max) @ Id: 3V @ 110µA, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 57.7 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V.

Інші пропозиції BSC084P03NS3EGATMA1

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BSC084P03NS3EGATMA1 BSC084P03NS3EGATMA1 Виробник : Infineon Technologies BSC084P03NS3E+G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304320896aa20120c84ef6ec327c Description: MOSFET P-CH 30V 14.9A 8TDSON
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Last Time Buy
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 3V @ 110µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 57.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
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