BSC0909NSATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 34V 12A/44A TDSON
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 34 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
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Технічний опис BSC0909NSATMA1 Infineon Technologies
Description: MOSFET N-CH 34V 12A/44A TDSON, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 34 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8-5, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 27W (Tc), Rds On (Max) @ Id, Vgs: 9.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN.
Інші пропозиції BSC0909NSATMA1 за ціною від 13.84 грн до 60.26 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSC0909NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 34V Drain current: 44A Power dissipation: 27W Case: PG-TDSON-8 On-state resistance: 9.2mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ Gate-source voltage: ±20V |
на замовлення 82 шт: термін постачання 14-30 дні (днів) |
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BSC0909NSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 34V 12A/44A TDSON Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 34 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-5 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 27W (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 7853 шт: термін постачання 21-31 дні (днів) |
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| BSC0909NSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
на замовлення 82 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 58.47 грн |
| 11+ | 39.54 грн |
| BSC0909NSATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 34V 12A/44A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 34 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 34V 12A/44A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 34 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 7853 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 60.26 грн |
| 10+ | 36.19 грн |
| 100+ | 23.47 грн |
| 500+ | 16.89 грн |
| 1000+ | 15.23 грн |
| 2000+ | 13.84 грн |