BSC096N10LS5ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 40A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
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Технічний опис BSC096N10LS5ATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 40A TDSON-8-6, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V, Power Dissipation (Max): 3W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 36µA, Supplier Device Package: PG-TDSON-8-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V.
Інші пропозиції BSC096N10LS5ATMA1 за ціною від 60.62 грн до 126.63 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSC096N10LS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 40A TDSON-8-6Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 36µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V |
на замовлення 9256 шт: термін постачання 21-31 дні (днів) |
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BSC096N10LS5ATMA1 | Infineon Technologies |
MOSFETs TRENCH >=100V |
на замовлення 4790 шт: термін постачання 21-30 дні (днів) |
|
| BSC096N10LS5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 40A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Description: MOSFET N-CH 100V 40A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
на замовлення 9256 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 121.32 грн |
| 10+ | 100.56 грн |
| 25+ | 94.86 грн |
| 100+ | 81.70 грн |
| 250+ | 77.30 грн |
| 500+ | 74.19 грн |
| 1000+ | 70.08 грн |
| BSC096N10LS5ATMA1 |
![]() |
Виробник: Infineon Technologies
MOSFETs TRENCH >=100V
MOSFETs TRENCH >=100V
на замовлення 4790 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 126.63 грн |
| 10+ | 97.27 грн |
| 100+ | 74.71 грн |
| 250+ | 69.00 грн |
| 500+ | 64.28 грн |
| 1000+ | 60.69 грн |
| 2500+ | 60.62 грн |



