BSC0996NSATMA1 Infineon Technologies

Description: MOSFET N-CH 34V 13A TDSON-8-5, Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 34 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TDSON-8-5, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.5W (Ta).