BSC105N15LS5ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 76A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V, Power Dissipation (Max): 2.5W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 91µA, Supplier Device Package: PG-TDSON-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 75 V.