BSC265N10LSFGATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 6.5A/40A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
Відгуки про товар
Написати відгук
Технічний опис BSC265N10LSFGATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 6.5A/40A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 26.5mOhm @ 20A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 43µA, Supplier Device Package: PG-TDSON-8-1, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V.
Інші пропозиції BSC265N10LSFGATMA1 за ціною від 23.89 грн до 108.54 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BSC265N10LSFGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 6.5A/40A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 20A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 43µA Supplier Device Package: PG-TDSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V |
на замовлення 14791 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
BSC265N10LSFGATMA1 | Infineon Technologies |
MOSFETs N-Ch 100V 40A TDSON-8 OptiMOS 2 |
на замовлення 4632 шт: термін постачання 21-30 дні (днів) |
|
| BSC265N10LSFGATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 6.5A/40A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
Description: MOSFET N-CH 100V 6.5A/40A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
на замовлення 14791 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 106.25 грн |
| 10+ | 64.67 грн |
| 100+ | 43.03 грн |
| 500+ | 31.64 грн |
| 1000+ | 28.83 грн |
| 2000+ | 26.46 грн |
| BSC265N10LSFGATMA1 |
|
Виробник: Infineon Technologies
MOSFETs N-Ch 100V 40A TDSON-8 OptiMOS 2
MOSFETs N-Ch 100V 40A TDSON-8 OptiMOS 2
на замовлення 4632 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 108.54 грн |
| 10+ | 65.49 грн |
| 100+ | 38.84 грн |
| 500+ | 30.45 грн |
| 1000+ | 26.50 грн |
| 2500+ | 26.36 грн |
| 5000+ | 23.89 грн |