Технічний опис BSF035NE2LQXUMA1 Infineon Technologies
Description: MOSFET N-CH 25V 22A/69A 2WDSON, Input Capacitance (Ciss) (Max) @ Vds: 1862 pF @ 12 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: MG-WDSON-2, CanPAK M™, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.2W (Ta), 28W (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 69A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-WDSON, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Packaging: Tape & Reel (TR).
Інші пропозиції BSF035NE2LQXUMA1
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BSF035NE2LQXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 25V 22A/69A 2WDSONInput Capacitance (Ciss) (Max) @ Vds: 1862 pF @ 12 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: MG-WDSON-2, CanPAK M™ Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.2W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 69A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-WDSON Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Packaging: Tape & Reel (TR) |
товару немає в наявності |
