BSF134N10NJ3GXUMA1 Infineon Technologies

Description: MOSFET N-CH 100V 9A/40A 2WDSON, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: MG-WDSON-2, CanPAK M™, Vgs(th) (Max) @ Id: 3.5V @ 40µA, Power Dissipation (Max): 2.2W (Ta), 43W (Tc), Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-WDSON.