BSH111,235 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 55V 335MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 335mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 830mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис BSH111,235 Nexperia USA Inc.
Description: MOSFET N-CH 55V 335MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 335mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V, Power Dissipation (Max): 830mW (Tc), Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: TO-236AB, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V.
Інші пропозиції BSH111,235
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
BSH111,235 | Виробник : Nexperia |
MOSFETs TAPE13 MOSFET |
товару немає в наявності |