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Технічний опис BSH121,135 Nexperia
Description: MOSFET N-CH 75V 300MA SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V, Power Dissipation (Max): 700mW (Tc), Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V.
Інші пропозиції BSH121,135
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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BSH121,135 | Nexperia USA Inc. |
 Description: MOSFET N-CH 75V 300MA SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V Power Dissipation (Max): 700mW (Tc) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
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BSH121,135 | Nexperia USA Inc. |
Description: MOSFET N-CH 75V 300MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V Power Dissipation (Max): 700mW (Tc) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
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BSH121,135 | NEXPERIA |
Description: NEXPERIA - BSH121,135 - Leistungs-MOSFET, n-Kanal, 55 V, 500 mA, 2.3 ohm, SOT-323, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55 Dauer-Drainstrom Id: 500 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 700 Gate-Source-Schwellenspannung, max.: 1 Verlustleistung: 700 Bauform - Transistor: SOT-323 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 2.3 Rds(on)-Prüfspannung: 4.5 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 2.3 SVHC: No SVHC (15-Jan-2018) |
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В кошику од. на суму грн. |
| BSH121,135 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 75V 300MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 700mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET N-CH 75V 300MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 700mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| BSH121,135 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 75V 300MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 700mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET N-CH 75V 300MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 700mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| BSH121,135 |
|
Виробник: NEXPERIA
Description: NEXPERIA - BSH121,135 - Leistungs-MOSFET, n-Kanal, 55 V, 500 mA, 2.3 ohm, SOT-323, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 55
Dauer-Drainstrom Id: 500
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 700
Gate-Source-Schwellenspannung, max.: 1
Verlustleistung: 700
Bauform - Transistor: SOT-323
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 2.3
Rds(on)-Prüfspannung: 4.5
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 2.3
SVHC: No SVHC (15-Jan-2018)
Description: NEXPERIA - BSH121,135 - Leistungs-MOSFET, n-Kanal, 55 V, 500 mA, 2.3 ohm, SOT-323, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 55
Dauer-Drainstrom Id: 500
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 700
Gate-Source-Schwellenspannung, max.: 1
Verlustleistung: 700
Bauform - Transistor: SOT-323
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 2.3
Rds(on)-Prüfspannung: 4.5
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 2.3
SVHC: No SVHC (15-Jan-2018)
товару немає в наявності
В кошику
од. на суму грн.