BSL207NH6327XTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.1A 6TSOP
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-TSOP-6-1
Vgs(th) (Max) @ Id: 1.2V @ 11µA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
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Технічний опис BSL207NH6327XTSA1 Infineon Technologies
Description: MOSFET 2N-CH 20V 2.1A 6TSOP, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 2.1A, Drain to Source Voltage (Vdss): 20V, Power - Max: 500mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: PG-TSOP-6-1, Vgs(th) (Max) @ Id: 1.2V @ 11µA, FET Feature: Logic Level Gate, 2.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V, Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V.
Інші пропозиції BSL207NH6327XTSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
BSL207NH6327XTSA1 | Виробник : Infineon Technologies |
MOSFET SMALL SIGNAL+P-CH |
товару немає в наявності |
