BSL207NL6327HTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.1A TSOP6-6
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.2V @ 11µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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Технічний опис BSL207NL6327HTSA1 Infineon Technologies
Description: MOSFET 2N-CH 20V 2.1A TSOP6-6, Supplier Device Package: PG-TSOP6-6, Vgs(th) (Max) @ Id: 1.2V @ 11µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V, Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 2.1A, Drain to Source Voltage (Vdss): 20V, Power - Max: 500mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції BSL207NL6327HTSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
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BSL207NL6327HTSA1 | Infineon Technologies |
Description: MOSFET 2N-CH 20V 2.1A TSOP6-6 Vgs(th) (Max) @ Id: 1.2V @ 11µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Current - Continuous Drain (Id) @ 25°C: 2.1A Drain to Source Voltage (Vdss): 20V Power - Max: 500mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Supplier Device Package: PG-TSOP6-6 |
товару немає в наявності |
В кошику од. на суму грн. |
| BSL207NL6327HTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.1A TSOP6-6
Vgs(th) (Max) @ Id: 1.2V @ 11µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Supplier Device Package: PG-TSOP6-6
Description: MOSFET 2N-CH 20V 2.1A TSOP6-6
Vgs(th) (Max) @ Id: 1.2V @ 11µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Supplier Device Package: PG-TSOP6-6
товару немає в наявності
В кошику
од. на суму грн.