BSL214NL6327HTSA1

BSL214NL6327HTSA1 Infineon Technologies


BSL214N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc5baa4504c2
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 1.5A TSOP6-6
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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Технічний опис BSL214NL6327HTSA1 Infineon Technologies

Description: MOSFET 2N-CH 20V 1.5A TSOP6-6, Supplier Device Package: PG-TSOP6-6, Vgs(th) (Max) @ Id: 1.2V @ 3.7µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V, Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 1.5A, Drain to Source Voltage (Vdss): 20V, Power - Max: 500mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).