BSL296SNH6327XTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.4A TSOP-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
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Технічний опис BSL296SNH6327XTSA1 Infineon Technologies
Description: MOSFET N-CH 100V 1.4A TSOP-6, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TSOP6-6, Vgs(th) (Max) @ Id: 1.8V @ 100µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції BSL296SNH6327XTSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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BSL296SNH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 1.4A TSOP-6 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TSOP6-6 Vgs(th) (Max) @ Id: 1.8V @ 100µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
BSL296SNH6327XTSA1 | Infineon Technologies |
MOSFET SMALL SIGNAL+P-CH |
товару немає в наявності |
В кошику од. на суму грн. |
 |
BSL296SNH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6; ESD Version: ESD Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar On-state resistance: 0.56Ω Drain current: 1.4A Power dissipation: 2W Gate-source voltage: ±20V Drain-source voltage: 100V Technology: OptiMOS™ Case: TSOP6 Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. |
| BSL296SNH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.4A TSOP-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 1.4A TSOP-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BSL296SNH6327XTSA1 |
|
Виробник: Infineon Technologies
MOSFET SMALL SIGNAL+P-CH
MOSFET SMALL SIGNAL+P-CH
товару немає в наявності
В кошику
од. на суму грн.
| BSL296SNH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6; ESD
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.56Ω
Drain current: 1.4A
Power dissipation: 2W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Technology: OptiMOS™
Case: TSOP6
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6; ESD
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.56Ω
Drain current: 1.4A
Power dissipation: 2W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Technology: OptiMOS™
Case: TSOP6
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.