BSL306NH6327XTSA1 Infineon Technologies
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 44.97 грн |
| 20+ | 37.77 грн |
| 25+ | 36.53 грн |
| 50+ | 28.68 грн |
| 100+ | 24.55 грн |
| 250+ | 21.54 грн |
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Технічний опис BSL306NH6327XTSA1 Infineon Technologies
Description: MOSFET 2N-CH 30V 2.3A TSOP6-6, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PG-TSOP6-6, Vgs(th) (Max) @ Id: 2V @ 11µA, FET Feature: Logic Level Gate, 4.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V, Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 2.3A, Drain to Source Voltage (Vdss): 30V, Power - Max: 500mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції BSL306NH6327XTSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
BSL306NH6327XTSA1 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 2.3A TSOP6-6Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PG-TSOP6-6 Vgs(th) (Max) @ Id: 2V @ 11µA FET Feature: Logic Level Gate, 4.5V Drive Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V Current - Continuous Drain (Id) @ 25°C: 2.3A Drain to Source Voltage (Vdss): 30V Power - Max: 500mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
BSL306NH6327XTSA1 | Infineon Technologies |
MOSFETs SMALL SIGNALN CH |
товару немає в наявності |
В кошику од. на суму грн. |
| BSL306NH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 2.3A TSOP6-6
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 11µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 2.3A TSOP6-6
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 11µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BSL306NH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
MOSFETs SMALL SIGNALN CH
MOSFETs SMALL SIGNALN CH
товару немає в наявності
В кошику
од. на суму грн.




