BSL308CH6327XTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V 2.3A TSOP6-6
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 11µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 14.75 грн |
| 6000+ | 13.06 грн |
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Технічний опис BSL308CH6327XTSA1 Infineon Technologies
Description: MOSFET N/P-CH 30V 2.3A TSOP6-6, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: PG-TSOP6-6, Vgs(th) (Max) @ Id: 2V @ 11µA, FET Feature: Logic Level Gate, 4.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A, Drain to Source Voltage (Vdss): 30V, Power - Max: 500mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції BSL308CH6327XTSA1 за ціною від 10.78 грн до 61.06 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSL308CH6327XTSA1 | Infineon Technologies |
MOSFETs SMALL SIGNAL+P-CH |
на замовлення 85462 шт: термін постачання 21-30 дні (днів) |
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BSL308CH6327XTSA1 | Infineon Technologies |
Description: MOSFET N/P-CH 30V 2.3A TSOP6-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2V @ 11µA Supplier Device Package: PG-TSOP6-6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 6870 шт: термін постачання 21-31 дні (днів) |
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| BSL308CH6327XTSA1 |
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Виробник: Infineon Technologies
MOSFETs SMALL SIGNAL+P-CH
MOSFETs SMALL SIGNAL+P-CH
на замовлення 85462 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 56.57 грн |
| 11+ | 30.72 грн |
| 100+ | 18.61 грн |
| 500+ | 14.59 грн |
| 1000+ | 12.90 грн |
| 3000+ | 10.78 грн |
| BSL308CH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V 2.3A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 2.3A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 6870 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.06 грн |
| 10+ | 36.65 грн |
| 100+ | 23.81 грн |
| 500+ | 17.14 грн |
| 1000+ | 15.46 грн |



