Технічний опис BSL316CL6327 Infineon technologies
Description: P-CHANNEL MOSFET, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A, Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V, Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 3.7µA, Supplier Device Package: PG-TSOP6-6, Part Status: Active.
Інші пропозиції BSL316CL6327
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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BSL316C L6327 | Виробник : Infineon Technologies |
 Trans MOSFET N/P-CH 30V 1.4A/1.5A Automotive 6-Pin TSOP T/R |
товару немає в наявності |
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BSL316CL6327 | Виробник : Infineon Technologies |
Description: P-CHANNEL MOSFET Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 3.7µA Supplier Device Package: PG-TSOP6-6 Part Status: Active |
товару немає в наявності |
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BSL316C L6327 | Виробник : Infineon Technologies |
MOSFET N and P-Ch 30V 1.4A TSOP-6 |
товару немає в наявності |