BSL716SNH6327XTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 2.5A TSOP-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 1575+ | 12.86 грн |
Відгуки про товар
Написати відгук
Технічний опис BSL716SNH6327XTSA1 Infineon Technologies
Description: MOSFET N-CH 75V 2.5A TSOP-6, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TSOP6-6, Vgs(th) (Max) @ Id: 1.8V @ 218µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції BSL716SNH6327XTSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
BSL716SNH6327XTSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 75V 2.5A TSOP-6 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TSOP6-6 Vgs(th) (Max) @ Id: 1.8V @ 218µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
|
 |
BSL716SNH6327XTSA1 | Виробник : Infineon Technologies |
MOSFETs SMALL SIGNAL+P-CH |
товару немає в наявності |