BSM100GB120DN2HOSA1 ROCHESTER ELECTRONICS
Виробник: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BSM100GB120DN2HOSA1 - MEDIUM POWER 62MM
tariffCode: 85412900
euEccn: TBC
hazardous: false
productTraceability: Yes-Date/Lot Code
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
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Технічний опис BSM100GB120DN2HOSA1 ROCHESTER ELECTRONICS
Description: IGBT MOD 1200V 150A 800W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 800 W, Current - Collector Cutoff (Max): 2 mA, Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V.
Інші пропозиції BSM100GB120DN2HOSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| BSM100GB120DN2HOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 150A 800W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 800 W Current - Collector Cutoff (Max): 2 mA Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| BSM100GB120DN2HOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 150A 800W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 800 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Description: IGBT MOD 1200V 150A 800W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 800 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.