BSM100GB120DN2HOSA1 Infineon Technologies

Description: IGBT MOD 1200V 150A 800W MOD, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 800 W, Current - Collector Cutoff (Max): 2 mA, Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V.