Технічний опис BSM100GB120DN2KHOSA1 Infineon Technologies
Description: IGBT MOD 1200V 145A 700W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 145 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 700 W, Current - Collector Cutoff (Max): 2 mA, Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V.
Інші пропозиції BSM100GB120DN2KHOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| BSM100GB120DN2KHOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 145A 700W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 145 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 700 W Current - Collector Cutoff (Max): 2 mA Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V |
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| BSM100GB120DN2KHOSA1 | Виробник : Infineon Technologies | Infineon MEDIUM POWER 34MM |
товар відсутній |