BSM10GD120DN2E3224BOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 15A 80W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 530 pF @ 25 V
Description: IGBT MODULE 1200V 15A 80W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 530 pF @ 25 V
на замовлення 2256 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 3963.11 грн |
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Технічний опис BSM10GD120DN2E3224BOSA1 Infineon Technologies
Description: IGBT MODULE 1200V 15A 80W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 80 W, Current - Collector Cutoff (Max): 400 µA, Input Capacitance (Cies) @ Vce: 530 pF @ 25 V.
Інші пропозиції BSM10GD120DN2E3224BOSA1 за ціною від 4494.37 грн до 4494.37 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||
|---|---|---|---|---|---|---|---|---|---|
| BSM10GD120DN2E3224BOSA1 | Виробник : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BSM10GD120DN2E3224BOSA1 - LOW POWER ECONO euEccn: TBC hazardous: false productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
на замовлення 2272 шт: термін постачання 21-31 дні (днів) |
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| BSM10GD120DN2E3224BOSA1 | Виробник : Infineon Technologies |
Description: IGBT MODULE 1200V 15A 80W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 80 W Current - Collector Cutoff (Max): 400 µA Input Capacitance (Cies) @ Vce: 530 pF @ 25 V |
товару немає в наявності |