BSM150GB120DLCHOSA1 Infineon Technologies


ds_bsm150gb120dlc_3_3.pdf Виробник: Infineon Technologies
Trans IGBT Module N-CH 1200V 300A 1250000mW 7-Pin 62MM-1 Tray
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Технічний опис BSM150GB120DLCHOSA1 Infineon Technologies

Description: IGBT MOD 1200V 300A 1250W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 300 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1250 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 11 nF @ 25 V.

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BSM150GB120DLCHOSA1 Виробник : Infineon Technologies ds_bsm150gb120dlc_3_3.pdf Trans IGBT Module N-CH 1200V 300A 1250W 7-Pin 62MM-1 Tray
товар відсутній
BSM150GB120DLCHOSA1 Виробник : Infineon Technologies Description: IGBT MOD 1200V 300A 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
товар відсутній