BSM150GB170DN2E3256HDLA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: BSM150GB170DN2 - INSULATED GATE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 7470.2 грн |
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Технічний опис BSM150GB170DN2E3256HDLA1 Infineon Technologies
Description: BSM150GB170DN2 - INSULATED GATE, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 300 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 1250 W, Current - Collector Cutoff (Max): 300 µA, Input Capacitance (Cies) @ Vce: 10 nF @ 25 V.