Технічний опис BSM180D12P2C101 ROHM Semiconductor
Description: MOSFET 2N-CH 1200V 180A MODULE, Part Status: Active, Supplier Device Package: Module, Vgs(th) (Max) @ Id: 4V @ 35.2mA, Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 204A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 1130W, Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Package / Case: Module, Packaging: Bulk.
Інші пропозиції BSM180D12P2C101 за ціною від 41713.27 грн до 41713.27 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BSM180D12P2C101 | Rohm Semiconductor |
 Description: MOSFET 2N-CH 1200V 180A MODULEPart Status: Active Supplier Device Package: Module Vgs(th) (Max) @ Id: 4V @ 35.2mA Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 10V Current - Continuous Drain (Id) @ 25°C: 204A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 1130W Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Package / Case: Module Packaging: Bulk |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| BSM180D12P2C101 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 1200V 180A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 1130W
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Package / Case: Module
Packaging: Bulk
Description: MOSFET 2N-CH 1200V 180A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 1130W
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Package / Case: Module
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 41713.27 грн |