Технічний опис BSM180D12P2E002 ROHM Semiconductor
Description: 1200V, 204A, HALF BRIDGE, SILICO, Power - Max: 1360W (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk, Part Status: Active, Supplier Device Package: Module, Vgs(th) (Max) @ Id: 4V @ 35.2mA, Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 204A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV).
Інші пропозиції BSM180D12P2E002 за ціною від 54762.76 грн до 54762.76 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
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BSM180D12P2E002 | Rohm Semiconductor |
Description: 1200V, 204A, HALF BRIDGE, SILICO Power - Max: 1360W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Supplier Device Package: Module Vgs(th) (Max) @ Id: 4V @ 35.2mA Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V Current - Continuous Drain (Id) @ 25°C: 204A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
|
| BSM180D12P2E002 |
Виробник: Rohm Semiconductor
Description: 1200V, 204A, HALF BRIDGE, SILICO
Power - Max: 1360W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Description: 1200V, 204A, HALF BRIDGE, SILICO
Power - Max: 1360W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 54762.76 грн |