BSM200GA120DN2S7HOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1.55 W
Current - Collector Cutoff (Max): 4 mA
Description: IGBT MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1.55 W
Current - Collector Cutoff (Max): 4 mA
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Технічний опис BSM200GA120DN2S7HOSA1 Infineon Technologies
Description: IGBT MOD, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Switch, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 300 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1.55 W, Current - Collector Cutoff (Max): 4 mA.