BSM200GB120DLCE3256HOSA1 Infineon
Виробник: Infineon
IGBT Module Half Bridge 1200 V 420 A 1550 W Chassis Mount Module Силові IGBT-модулі
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Технічний опис BSM200GB120DLCE3256HOSA1 Infineon
Description: BSM200GB120DLC - IGBT, Input Capacitance (Cies) @ Vce: 13 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 1550 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 420 A, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A, Operating Temperature: -40°C ~ 125°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.
Інші пропозиції BSM200GB120DLCE3256HOSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| BSM200GB120DLCE3256HOSA1 | Infineon Technologies |
Description: BSM200GB120DLC - IGBT Input Capacitance (Cies) @ Vce: 13 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 1550 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 420 A Supplier Device Package: Module NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A Operating Temperature: -40°C ~ 125°C (TJ) Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
| BSM200GB120DLCE3256HOSA1 | Infineon Technologies |
Description: IGBT MOD Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 420 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1550 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| BSM200GB120DLCE3256HOSA1 |
Виробник: Infineon Technologies
Description: BSM200GB120DLC - IGBT
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1550 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 420 A
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: BSM200GB120DLC - IGBT
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1550 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 420 A
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| BSM200GB120DLCE3256HOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: IGBT MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.