BSM25GD120DN2E3224BOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 35A 200W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Description: IGBT MOD 1200V 35A 200W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис BSM25GD120DN2E3224BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 35A 200W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 200 W, Current - Collector Cutoff (Max): 800 µA, Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V.
Інші пропозиції BSM25GD120DN2E3224BOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| BSM25GD120DN2E3224BOSA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 25A Power dissipation: 200W Case: ECONOPACK 2K Gate-emitter voltage: ±20V Pulsed collector current: 50A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Application: Inverter Electrical mounting: Press-in PCB Topology: IGBT three-phase bridge Mechanical mounting: screw Type of module: IGBT |
товар відсутній |