BSM30GP60B2BOSA1 Infineon Technologies



Виробник: Infineon Technologies
Description: IGBT MODULE 600V 50A 180W
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 180 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
Operating Temperature: -40°C ~ 125°C
Configuration: Full Bridge
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Технічний опис BSM30GP60B2BOSA1 Infineon Technologies

Description: IGBT MODULE 600V 50A 180W, Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V, Current - Collector Cutoff (Max): 500 µA, Power - Max: 180 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 50 A, Part Status: Obsolete, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A, Operating Temperature: -40°C ~ 125°C, Configuration: Full Bridge, Input: Three Phase Bridge Rectifier, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.