BSM50GB120DLCHOSA1 ROCHESTER ELECTRONICS
Виробник: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BSM50GB120DLCHOSA1 - BSM50GB120 INSULATED GATE BIPOLAR TRANS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
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Технічний опис BSM50GB120DLCHOSA1 ROCHESTER ELECTRONICS
Description: IGBT MOD 1200V 115A 460W MOD, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 115 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 460 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V.
Інші пропозиції BSM50GB120DLCHOSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| BSM50GB120DLCHOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 115A 460W MOD Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A NTC Thermistor: No Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 115 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 460 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| BSM50GB120DLCHOSA1 | Infineon Technologies | Trans IGBT Module N-CH 1200V 115A 460000mW |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
| BSM50GB120DLCHOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 115A 460W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 460 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Description: IGBT MOD 1200V 115A 460W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 460 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| BSM50GB120DLCHOSA1 |
Виробник: Infineon Technologies
Trans IGBT Module N-CH 1200V 115A 460000mW
Trans IGBT Module N-CH 1200V 115A 460000mW
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.