Технічний опис BSM50GP60BOSA1 Infineon Technologies
Description: IGBT MODULE 600V 70A 250W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Full Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: Module, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V.
Інші пропозиції BSM50GP60BOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| BSM50GP60BOSA1 | Виробник : Infineon Technologies |
Description: IGBT MODULE 600V 70A 250W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Full Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: Module Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V |
товару немає в наявності |
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| BSM50GP60BOSA1 | Виробник : Infineon Technologies | IGBT Modules LOW POWER ECONO |
товару немає в наявності |