BSM75GAR120DN2HOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 30A 235W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 235 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Description: IGBT MOD 1200V 30A 235W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 235 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
на замовлення 535 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 5841.06 грн |
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Технічний опис BSM75GAR120DN2HOSA1 Infineon Technologies
Description: IGBT MOD 1200V 30A 235W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Obsolete, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 235 W, Current - Collector Cutoff (Max): 400 µA, Input Capacitance (Cies) @ Vce: 1 nF @ 25 V.
Інші пропозиції BSM75GAR120DN2HOSA1 за ціною від 6055.34 грн до 6055.34 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||
|---|---|---|---|---|---|---|---|---|---|
| BSM75GAR120DN2HOSA1 | Виробник : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BSM75GAR120DN2HOSA1 - BSM75GAR120 INSULATED GATE BIPOLAR TRAN euEccn: TBC hazardous: false productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
на замовлення 535 шт: термін постачання 21-31 дні (днів) |
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| BSM75GAR120DN2HOSA1 | Виробник : Infineon Technologies |
 Trans IGBT Module N-CH |
товару немає в наявності |
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| BSM75GAR120DN2HOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 30A 235W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 235 W Current - Collector Cutoff (Max): 400 µA Input Capacitance (Cies) @ Vce: 1 nF @ 25 V |
товару немає в наявності |