Технічний опис BSM75GD120DN2BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 103A 520W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 103 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 520 W, Current - Collector Cutoff (Max): 1.5 mA, Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V.
Інші пропозиції BSM75GD120DN2BOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| BSM75GD120DN2BOSA1 | Виробник : Infineon Technologies | LOW POWER ECONO |
товару немає в наявності |
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| BSM75GD120DN2BOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 103A 520W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A NTC Thermistor: No Supplier Device Package: Module Part Status: Not For New Designs Current - Collector (Ic) (Max): 103 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 520 W Current - Collector Cutoff (Max): 1.5 mA Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V |
товару немає в наявності |