BSN20Q-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V
Power Dissipation (Max): 600mW (Ta), 920mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис BSN20Q-7 Diodes Incorporated
Description: MOSFET N-CH 50V 500MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V, Power Dissipation (Max): 600mW (Ta), 920mW (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BSN20Q-7 за ціною від 5.57 грн до 24.02 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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BSN20Q-7 | Diodes Incorporated |
Description: MOSFET N-CH 50V 500MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V Power Dissipation (Max): 600mW (Ta), 920mW (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3297 шт: термін постачання 21-31 дні (днів) |
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BSN20Q-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: |
на замовлення 6505 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| BSN20Q-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V
Power Dissipation (Max): 600mW (Ta), 920mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V
Power Dissipation (Max): 600mW (Ta), 920mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3297 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.02 грн |
| 21+ | 14.40 грн |
| 100+ | 9.01 грн |
| 500+ | 6.28 грн |
| 1000+ | 5.57 грн |
| BSN20Q-7 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS:
MOSFETs MOSFET BVDSS:
на замовлення 6505 шт:
термін постачання 21-30 дні (днів)