Технічний опис BSN254A,126 NXP
Description: MOSFET N-CH 250V 310MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB).
Інші пропозиції BSN254A,126
| Фото | Назва | Виробник | Інформація |
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BSN254A,126 | Виробник : NXP USA Inc. |
 Description: MOSFET N-CH 250V 310MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
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