BSO080P03NS3EGXUMA1 ROCHESTER ELECTRONICS
Виробник: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - BSO080P03NS3EGXUMA1 - BSO080P03 20V-250V P-CHANNEL POWER MOSF
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
на замовлення 5850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 733+ | 34.58 грн |
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Технічний опис BSO080P03NS3EGXUMA1 ROCHESTER ELECTRONICS
Description: MOSFET P-CH 30V 12A 8DSO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 3.1V @ 150µA, Supplier Device Package: PG-DSO-8, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V.
Інші пропозиції BSO080P03NS3EGXUMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BSO080P03NS3EGXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET P-CH 30V 12A 8DSO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3.1V @ 150µA Supplier Device Package: PG-DSO-8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V |
товару немає в наявності |
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BSO080P03NS3EGXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET P-CH 30V 12A 8DSO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3.1V @ 150µA Supplier Device Package: PG-DSO-8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V |
товару немає в наявності |