BSO080P03SHXUMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
на замовлення 2107 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 193.21 грн |
| 10+ | 119.31 грн |
| 100+ | 81.55 грн |
| 500+ | 61.34 грн |
| 1000+ | 56.46 грн |
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Технічний опис BSO080P03SHXUMA1 Infineon Technologies
Description: INFINEON - BSO080P03SHXUMA1 - Leistungs-MOSFET, p-Kanal, 30 V, 12.6 A, 6700 µohm, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 12.6A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.5V, euEccn: NLR, Verlustleistung: 1.79W, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 6700µohm, SVHC: No SVHC (21-Jan-2025).
Інші пропозиції BSO080P03SHXUMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BSO080P03SHXUMA1 | Виробник : INFINEON |
Description: INFINEON - BSO080P03SHXUMA1 - Leistungs-MOSFET, p-Kanal, 30 V, 12.6 A, 6700 µohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 12.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.79W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6700µohm SVHC: No SVHC (21-Jan-2025) |
товару немає в наявності |
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BSO080P03SHXUMA1 | Виробник : INFINEON |
Description: INFINEON - BSO080P03SHXUMA1 - Leistungs-MOSFET, p-Kanal, 30 V, 12.6 A, 6700 µohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 12.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.79W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6700µohm SVHC: No SVHC (21-Jan-2025) |
товару немає в наявності |
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BSO080P03SHXUMA1 | Виробник : Infineon Technologies |
Trans MOSFET P-CH 30V 12.6A Automotive 8-Pin DSO T/R |
товару немає в наявності |
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BSO080P03SHXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET P-CH 30V 12.6A 8DSO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V Power Dissipation (Max): 1.79W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-DSO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V |
товару немає в наявності |
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BSO080P03SHXUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8 Mounting: SMD Technology: OptiMOS™ P Case: PG-DSO-8 Type of transistor: P-MOSFET Kind of channel: enhancement Polarisation: unipolar Drain-source voltage: -30V Drain current: -12.6A On-state resistance: 8mΩ Power dissipation: 1.79W Gate-source voltage: ±25V |
товару немає в наявності |