BSO203SPHXUMA1 INFINEON
Виробник: INFINEONDescription: INFINEON - BSO203SPHXUMA1 - Leistungs-MOSFET, p-Kanal, 20 V, 7 A, 0.015 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Verlustleistung Pd: 2.5W
Gate-Source-Schwellenspannung, max.: 900mV
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.015ohm
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.015ohm
SVHC: No SVHC (17-Jan-2023)
на замовлення 2407 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 105.96 грн |
| 10+ | 94.84 грн |
| 100+ | 80.76 грн |
| 500+ | 62.06 грн |
| 1000+ | 45.41 грн |
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Технічний опис BSO203SPHXUMA1 INFINEON
Description: INFINEON - BSO203SPHXUMA1 - Leistungs-MOSFET, p-Kanal, 20 V, 7 A, 0.015 ohm, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Verlustleistung Pd: 2.5W, Gate-Source-Schwellenspannung, max.: 900mV, euEccn: NLR, Verlustleistung: 2.5W, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: OptiMOS, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: p-Kanal, Kanaltyp: p-Kanal, Betriebswiderstand, Rds(on): 0.015ohm, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.015ohm, SVHC: No SVHC (17-Jan-2023).
Інші пропозиції BSO203SPHXUMA1
| Фото | Назва | Виробник | Інформація |
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BSO203SPHXUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -7A Power dissipation: 1.6W Case: PG-DSO-8 Gate-source voltage: ±12V On-state resistance: 21mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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BSO203SPHXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET P-CH 20V 7A 8DSO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: PG-DSO-8 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V |
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BSO203SPHXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET P-CH 20V 7A 8DSO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: PG-DSO-8 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V |
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BSO203SPHXUMA1 | Виробник : Infineon Technologies |
MOSFET P-Ch -20V -8.9A DSO-8 OptiMOS P |
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BSO203SPHXUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -7A Power dissipation: 1.6W Case: PG-DSO-8 Gate-source voltage: ±12V On-state resistance: 21mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |