BSO220N03MDGXUMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
| Кількість | Ціна |
|---|---|
| 2500+ | 20.66 грн |
| 5000+ | 18.36 грн |
| 7500+ | 17.57 грн |
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Технічний опис BSO220N03MDGXUMA1 Infineon Technologies
Description: MOSFET 2N-CH 30V 6A 8DSO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: PG-DSO-8, Part Status: Active.
Інші пропозиції BSO220N03MDGXUMA1 за ціною від 17.55 грн до 88.81 грн
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BSO220N03MDGXUMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 6A 8DSO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PG-DSO-8 Part Status: Active |
на замовлення 8052 шт: термін постачання 21-31 дні (днів) |
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BSO220N03MDGXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.7A Power dissipation: 1.56W Case: PG-DSO-8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
на замовлення 2440 шт: термін постачання 14-30 дні (днів) |
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BSO220N03MDGXUMA1 | Infineon Technologies |
MOSFETs N-Ch 30V 7.7A DSO-8 OptiMOS 3M |
на замовлення 61685 шт: термін постачання 21-30 дні (днів) |
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| BSO220N03MDGXUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Description: MOSFET 2N-CH 30V 6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
на замовлення 8052 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 80.09 грн |
| 10+ | 48.41 грн |
| 100+ | 31.81 грн |
| 500+ | 23.16 грн |
| 1000+ | 21.00 грн |
| BSO220N03MDGXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.7A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.7A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
на замовлення 2440 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 81.32 грн |
| 8+ | 57.35 грн |
| 10+ | 47.51 грн |
| 25+ | 36.23 грн |
| 50+ | 29.86 грн |
| 100+ | 25.37 грн |
| 250+ | 23.84 грн |
| BSO220N03MDGXUMA1 |
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Виробник: Infineon Technologies
MOSFETs N-Ch 30V 7.7A DSO-8 OptiMOS 3M
MOSFETs N-Ch 30V 7.7A DSO-8 OptiMOS 3M
на замовлення 61685 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 88.81 грн |
| 10+ | 44.42 грн |
| 100+ | 27.49 грн |
| 500+ | 22.84 грн |
| 1000+ | 21.00 грн |
| 2500+ | 17.97 грн |
| 5000+ | 17.55 грн |