Інші пропозиції BSO613SPVGXUMA1 за ціною від 24.71 грн до 103.84 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSO613SPVGXUMA1 | Infineon Technologies |
Description: MOSFET P-CH 8-SOICQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-DSO-8-6 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BSO613SPVGXUMA1 | Infineon Technologies |
Description: MOSFET P-CH 8-SOICQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-DSO-8-6 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 17005 шт: термін постачання 21-31 дні (днів) |
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BSO613SPVGXUMA1 | Infineon Technologies |
MOSFETs TRENCH <= 40V |
на замовлення 15679 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| BSO613SPVGXUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 8-SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-DSO-8-6
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 8-SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-DSO-8-6
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 24.71 грн |
| BSO613SPVGXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 8-SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-DSO-8-6
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 8-SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-DSO-8-6
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 17005 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 103.84 грн |
| 10+ | 63.05 грн |
| 100+ | 34.97 грн |
| 500+ | 29.17 грн |
| 1000+ | 28.27 грн |
| BSO613SPVGXUMA1 |
![]() |
Виробник: Infineon Technologies
MOSFETs TRENCH <= 40V
MOSFETs TRENCH <= 40V
на замовлення 15679 шт:
термін постачання 21-30 дні (днів)



