BSO615CGHUMA1 Infineon Technologies

Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.1A, 2A, Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 20µA, Supplier Device Package: PG-DSO-8, Part Status: Obsolete.