| Кількість | Ціна |
|---|---|
| 5+ | 72.69 грн |
| 10+ | 60.63 грн |
| 100+ | 43.77 грн |
| 500+ | 36.51 грн |
| 1000+ | 31.01 грн |
| 2500+ | 27.56 грн |
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Технічний опис BSO615NGXUMA1 Infineon Technologies
Description: MOSFET 2N-CH 60V 2.6A 8DSO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 2.6A, Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 20µA, Supplier Device Package: PG-DSO-8, Grade: Automotive, Part Status: Last Time Buy, Qualification: AEC-Q101.
Інші пропозиції BSO615NGXUMA1 за ціною від 34.41 грн до 125.28 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSO615NGXUMA1 | Infineon Technologies |
 Description: MOSFET 2N-CH 60V 2.6A 8DSOQualification: AEC-Q101 Grade: Automotive Supplier Device Package: PG-DSO-8 Vgs(th) (Max) @ Id: 2V @ 20µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Current - Continuous Drain (Id) @ 25°C: 2.6A Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Last Time Buy |
на замовлення 2155 шт: термін постачання 21-31 дні (днів) |
|
| BSO615NGXUMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 2.6A 8DSO
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 20µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Last Time Buy
Description: MOSFET 2N-CH 60V 2.6A 8DSO
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 20µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Last Time Buy
на замовлення 2155 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 125.28 грн |
| 10+ | 76.20 грн |
| 100+ | 50.98 грн |
| 500+ | 37.68 грн |
| 1000+ | 34.41 грн |