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BSP52E6327 Infineon

BSP50%2C%20BSP51%2C%20BSP52.pdf
Виробник: Infineon
SOT-223 Транзистори
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Технічний опис BSP52E6327 Infineon

Description: TRANS NPN DARL 80V 1A SOT223-4, Power - Max: 1.5 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Part Status: Obsolete, Supplier Device Package: PG-SOT223-4, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).

Інші пропозиції BSP52E6327

Фото Назва Виробник Інформація Доступність Ціна
BSP 52 E6327 BSP 52 E6327 Infineon Technologies bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf Description: TRANS NPN DARL 80V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
BSP 52 E6327 bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf
BSP 52 E6327
Виробник: Infineon Technologies
Description: TRANS NPN DARL 80V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.